Product Summary

Suitable for reducing set’s size as a result from enabling high-density 
mounting due to 2-pin small packages. 
 Low capacitance ratio: CT = 0.25 pF (typ.) 
 Low series resistance: rs = 3 Ω (typ.) 
Maximum Ratings (Ta  25°C)
Characteristics Symbol Rating Unit 
Reverse voltage VR 50 V 
Forward current IF 50 mA 
Junction temperature Tj 125 °C 
Storage temperature range Tstg 55~125 °C 

Parametrics

Electrical Characteristics (Ta  25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Reverse voltage VR IR  10 A 50    V 
Reverse current IR VR  50 V    0.1  A 
Forward voltage VF IF  50 mA   0.95 1.0 V 
Capacitance CT VR  50 V, f  1 MHz   0.25 0.4 pF 
Series resistance rs IF  10 mA, f  100 MHz   3.0   
Note: Signal level when capacitance is measured: Vsig  20 mVrms

Diagrams

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JDP2S04E
JDP2S04E

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JDP2S01AFS
JDP2S01AFS

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JDP2S01E
JDP2S01E

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JDP2S01S
JDP2S01S

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JDP2S01T
JDP2S01T

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JDP2S01U
JDP2S01U

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JDP2S02ACT
JDP2S02ACT

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