(China (Mainland))
Product Summary
? Small footprint due to a small and thin package
? High speed switching
? Small gate charge: QSW = 3.6 nC (typ.)
? Low drain-source ON-resistance: RDS (ON) = 13 mΩ (typ.)
? High forward transfer admittance: |Yfs| = 16 S (typ.)
? Low leakage current: IDSS = 10 μA (max) (VDS = 30V)
? Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating UnitDrain-source voltage VDSS 30 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID 7.2
Drain current
Pulsed (Note 1) IDP 28.8
A
Drain power dissipation (t = 5 s)
(Note 2a)
PD 1.68 W
Drain power dissipation (t = 5 s)
(Note 2b)
PD 0.84 W
Single-pulse avalanche energy
(Note 3)
EAS 33.6 mJ
Avalanche current IAR 7.2 A
Repetitive avalanche energy
(Note 2a) (Note 4)
EAR 0.066 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg ?55 to 150 °C
Note: For Notes 1 to 5, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 TPCP8001-H |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
TPCP8001-H(TE85LFM |
Toshiba |
MOSFET MOSFET N-Ch 30V 7.2A Rdson=0.016Ohm |
Data Sheet |
Negotiable |
|
||||
